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IRG4BC10SD Tech Specifications
Infineon IRG4BC10SD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 14A | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 8A, 100 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2000 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 38W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Reverse Recovery Time | 28ns | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Turn On Time | 106 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A | |
| Turn Off Time-Nom (toff) | 1780 ns | |
| Gate Charge | 15nC | |
| Current - Collector Pulsed (Icm) | 18A | |
| Td (on/off) @ 25°C | 76ns/815ns | |
| Switching Energy | 310μJ (on), 3.28mJ (off) | |
| RoHS Status | Non-RoHS Compliant |
IRG4BC10SD Documents
Download datasheets and manufacturer documentation for IRG4BC10SD
- Other Related DocumentsPart Number Guide
- PCN Obsolescence/ EOLEOL122B 02/Oct/2007
- Datasheets
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