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IRFP4868PBF Tech Specifications

Infineon  IRFP4868PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 517W Tc
Turn Off Delay Time 62 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 32MOhm
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 517W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10774pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 16ns
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 70A
Threshold Voltage 3V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 280A
Recovery Time 351 ns
Max Junction Temperature (Tj) 175°C
Height 24.99mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRFP4868PBF Documents

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