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IRFHM8326TRPBF Tech Specifications

Infineon  IRFHM8326TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.8W Ta 37W Tc
Turn Off Delay Time 18 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series HEXFET®
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 35ns
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.0067Ohm
Drain to Source Breakdown Voltage 30V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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