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IRFB4020PBF Tech Specifications

Infineon  IRFB4020PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Turn Off Delay Time 16 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 100MOhm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100mW
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 100m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 12ns
Vgs (Max) ±20V
Fall Time (Typ) 6.3 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 4.9V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 52A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 94 mJ
Recovery Time 120 ns
Nominal Vgs 4.9 V
Height 9.02mm
Length 10.6426mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRFB4020PBF Documents

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