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IRF9540NLPBF Tech Specifications

Infineon  IRF9540NLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 23A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.1W Ta 110W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 117mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 117m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 67ns
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Continuous Drain Current (ID) -23A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 92A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 84 mJ
Nominal Vgs 4 V
Height 9.65mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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