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IRF7317TRPBF Tech Specifications

Infineon  IRF7317TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.6A 5.3A
Number of Elements 2 Elements
Turn Off Delay Time 42 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 29mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.6A
Base Part Number IRF7317PBF
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 40ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 49 ns
Continuous Drain Current (ID) 6.6A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 100 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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