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IRF7314TRPBF Tech Specifications

Infineon  IRF7314TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.3A
Number of Elements 2 Elements
Turn Off Delay Time 41 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 58mOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5.3A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRF7314PBF
Row Spacing 6.3 mm
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 15 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 49 ns
Continuous Drain Current (ID) -5.3A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Avalanche Energy Rating (Eas) 150 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 71 ns
FET Feature Logic Level Gate
Nominal Vgs -700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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