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IRF6802SDTRPBF Tech Specifications
Infineon IRF6802SDTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric SA | |
| Number of Pins | 8Pins | |
| Turn Off Delay Time | 13 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 1.7W | |
| Power Dissipation | 1.7W | |
| Turn On Delay Time | 9.7 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 4.2m Ω @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 35μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 13V | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V | |
| Rise Time | 50ns | |
| Drain to Source Voltage (Vdss) | 25V | |
| Fall Time (Typ) | 23 ns | |
| Continuous Drain Current (ID) | 16A | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain Current-Max (Abs) (ID) | 57A | |
| Drain to Source Breakdown Voltage | 25V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free | 
IRF6802SDTRPBF Documents
Download datasheets and manufacturer documentation for IRF6802SDTRPBF
- DatasheetsIRF6802SD (TR) PBF
 - PCN Obsolescence/ EOLMult Devices EOL 08/May/2019
 - PCN OtherMSL Update 20/Feb/2014
 - Other Related DocumentsIR Part Numbering System
 - PCN PackagingPackage Drawing Update 19/Aug/2015
 - ConflictMineralStatementInfineon-company-51.pdf
 
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