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IRF5850TRPBF
Infineon IRF5850TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Number of Pins | 6Pins | |
Supplier Device Package | 6-TSOP | |
Current - Continuous Drain (Id) @ 25℃ | 2.2A | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 31 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | HEXFET® | |
Published | 2005 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
Max Operating Temperature | 150°C | |
Min Operating Temperature | -55°C | |
Max Power Dissipation | 960mW | |
Base Part Number | IRF5850PBF | |
Element Configuration | Dual | |
Power Dissipation | 960mW | |
Turn On Delay Time | 8.3 ns | |
Power - Max | 960mW | |
FET Type | 2 P-Channel (Dual) | |
Rds On (Max) @ Id, Vgs | 135mOhm @ 2.2A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | |
Rise Time | 14ns | |
Drain to Source Voltage (Vdss) | 20V | |
Fall Time (Typ) | 28 ns | |
Continuous Drain Current (ID) | -2.2A | |
Gate to Source Voltage (Vgs) | 12V | |
Drain to Source Breakdown Voltage | -20V | |
Input Capacitance | 320pF | |
FET Feature | Logic Level Gate | |
Drain to Source Resistance | 220mOhm | |
Rds On Max | 135 mΩ | |
Height | 1.143mm | |
Length | 2.9972mm | |
Width | 1.75mm | |
Radiation Hardening | No | |
RoHS Status | RoHS Compliant |
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