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IPD60R600C6ATMA1 Tech Specifications

Infineon  IPD60R600C6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 3.949996g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 63W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ C6
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Rise Time 9ns
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.6Ohm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPD60R600C6ATMA1 Documents

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