- All Products
- Discrete Semiconductor Products
- Transistors - IGBTs - Modules
- DDB6U180N16RRB37BOSA1
In Stock
:
2534 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
DDB6U180N16RRB37BOSA1 Tech Specifications
Infineon DDB6U180N16RRB37BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 16 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | Module | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Min.) | -40°C | |
| Published | 2006 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 29Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | UL RECOGNIZED | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XUFM-X29 | |
| Configuration | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
| Case Connection | ISOLATED | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Turn On Time | 210 ns | |
| Turn Off Time-Nom (toff) | 620 ns | |
| Collector-Emitter Voltage-Max | 1200V | |
| RoHS Status | ROHS3 Compliant |
DDB6U180N16RRB37BOSA1 Documents
Download datasheets and manufacturer documentation for DDB6U180N16RRB37BOSA1
- PCN Assembly/OriginAdditional Wafer Site/Change 24/Nov/2016
- Other Related DocumentsPart Number Guide
- PCN Obsolescence/ EOLMult Device EOL 7/Nov/2016
- PCN Part Status ChangeOBS Notice Revoked 19/Dec/2016
- ConflictMineralStatementInfineon-company-51.pdf
- Datasheets
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



