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BSD235CH6327XTSA1 Tech Specifications

Infineon  BSD235CH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 950mA 530mA
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
HTS Code 8541.21.00.95
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSD235
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 350m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1.6μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 47pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 530mA
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage -20V
Drain Current-Max (Abs) (ID) 0.95A
Drain-source On Resistance-Max 0.35Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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