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BSC16DN25NS3GATMA1 Tech Specifications

Infineon  BSC16DN25NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 62.5W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2011
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 32μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Rise Time 4ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Pulsed Drain Current-Max (IDM) 44A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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