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BFP650H6327XTSA1 Tech Specifications

Infineon  BFP650H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 41GHz
Base Part Number BFP650
Element Configuration Single
Power Dissipation 500mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA 3V
Gain 10.5dB ~ 21.5dB
Transition Frequency 42000MHz
Max Breakdown Voltage 4.5V
Frequency - Transition 37GHz
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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