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BFP640FH6327XTSA1 Tech Specifications

Infineon  BFP640FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Max Power Dissipation 200mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 40GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP640
Configuration SINGLE
Power Dissipation 200mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA 3V
Gain 23dB
Transition Frequency 40000MHz
Max Breakdown Voltage 4.5V
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Collector-Base Capacitance-Max 0.2pF
Noise Figure (dB Typ @ f) 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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