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BFN26E6327HTSA1 Tech Specifications

Infineon  BFN26E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 300V
Number of Elements 1 Element
hFEMin 30
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 300V
Max Power Dissipation 360mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 200mA
Frequency 70MHz
Base Part Number BFN26
Element Configuration Single
Power Dissipation 360mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 70MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
Height 900μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFN26E6327HTSA1 Documents

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