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BCV27E6327HTSA1 Tech Specifications
Infineon BCV27E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 26 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 30V | |
Number of Elements | 1 Element | |
hFEMin | 4000 | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2006 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Not For New Designs | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Voltage - Rated DC | 30V | |
Max Power Dissipation | 360mW | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Current Rating | 500mA | |
Base Part Number | BCV27 | |
Polarity | NPN | |
Element Configuration | Single | |
Power Dissipation | 360mW | |
Halogen Free | Not Halogen Free | |
Transistor Type | NPN - Darlington | |
Collector Emitter Voltage (VCEO) | 1V | |
Max Collector Current | 500mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V | |
Current - Collector Cutoff (Max) | 100nA ICBO | |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100μA, 100mA | |
Transition Frequency | 170MHz | |
Max Breakdown Voltage | 30V | |
Frequency - Transition | 170MHz | |
Collector Base Voltage (VCBO) | 40V | |
Emitter Base Voltage (VEBO) | 10V | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
BCV27E6327HTSA1 Documents
Download datasheets and manufacturer documentation for BCV27E6327HTSA1
- DatasheetsBCV27, BCV47
- Other Related DocumentsPart Number Guide
- PCN Obsolescence/ EOLMulti Device EOL 4/Feb/2016 Mult Dev LTB Rev 17/Dec/2018
- PCN PackagingCarrier Tape Update 03/Jun/2015
- ConflictMineralStatementInfineon-company-51.pdf
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