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BCV27E6327HTSA1 Tech Specifications

Infineon  BCV27E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 26 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
hFEMin 4000
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 1V
Collector-Emitter Breakdown Voltage 30V
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 30V
Max Power Dissipation 360mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Base Part Number BCV27
Polarity NPN
Element Configuration Single
Power Dissipation 360mW
Halogen Free Not Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 170MHz
Max Breakdown Voltage 30V
Frequency - Transition 170MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free
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