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HYG065N15NS1B6 Tech Specifications

HUAYI  HYG065N15NS1B6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Drain Source Voltage (Vdss) 150V
Drain Source On Resistance (RDS(on)@Vgs,Id) 6mΩ@10V,100A
Power Dissipation (Pd) 375W
Gate Threshold Voltage (Vgs(th)@Id) 3.2V@250uA
Reverse Transfer Capacitance (Crss@Vds) 88pF@75V
Input Capacitance (Ciss@Vds) 6.646nF@75V
Total Gate Charge (Qg@Vgs) 96nC@10V
Package Tape & Reel (TR)
Type 1 N-Channel
Continuous Drain Current (Id) 165A
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HYG065N15NS1B6 Documents

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HYG065N15NS1B6 brand manufacturers: HUAYI, Twicea stock, HYG065N15NS1B6 reference price.HUAYI. HYG065N15NS1B6 parameters, HYG065N15NS1B6 Datasheet PDF and pin diagram description download.You can use the HYG065N15NS1B6 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find HYG065N15NS1B6 pin diagram and circuit diagram and usage method of function,HYG065N15NS1B6 electronics tutorials.You can download from the Twicea.