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HYG065N07NS1B Tech Specifications

HUAYI  HYG065N07NS1B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Drain Source Voltage (Vdss) 70V
Drain Source On Resistance (RDS(on)@Vgs,Id) 5.5mΩ@10V,40A
Power Dissipation (Pd) 125W
Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
Reverse Transfer Capacitance (Crss@Vds) 26pF@25V
Input Capacitance (Ciss@Vds) 2.99nF@25V
Total Gate Charge (Qg@Vgs) 52nC@10V
Package Tape & Reel (TR)
Operating Temperature -55℃~+175℃@(Tj)
Type 1 N-Channel
Continuous Drain Current (Id) 100A
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HYG065N07NS1B Documents

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