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HYG060P04LQ1D Tech Specifications
HUAYI HYG060P04LQ1D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| RoHS | true | |
| Drain Source Voltage (Vdss) | 40V | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.8mΩ@10V,20A | |
| Power Dissipation (Pd) | 65W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 403pF@25V | |
| Input Capacitance (Ciss@Vds) | 6.774nF@25V | |
| Total Gate Charge (Qg@Vgs) | 63nC@4.5V | |
| Package | Tape & Reel (TR) | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-Channel | |
| Continuous Drain Current (Id) | 70A |
HYG060P04LQ1D Documents
Download datasheets and manufacturer documentation for HYG060P04LQ1D
- Datasheets2105242011_HUAYI-HYG060P04LQ1D_C2827237.pdf
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