Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply

HYG018N10NS1B6 Tech Specifications

HUAYI  HYG018N10NS1B6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Drain Source Voltage (Vdss) 100V
Drain Source On Resistance (RDS(on)@Vgs,Id) 1.4mΩ@10V,100A
Power Dissipation (Pd) 375W
Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
Reverse Transfer Capacitance (Crss@Vds) 208pF@25V
Input Capacitance (Ciss@Vds) 12.57nF@25V
Total Gate Charge (Qg@Vgs) 205nC@10V
Package Tape & Reel (TR)
Operating Temperature -55℃~+175℃@(Tj)
Type 1 N-Channel
Continuous Drain Current (Id) 322A
View Similar
HYG018N10NS1B6 brand manufacturers: HUAYI, Twicea stock, HYG018N10NS1B6 reference price.HUAYI. HYG018N10NS1B6 parameters, HYG018N10NS1B6 Datasheet PDF and pin diagram description download.You can use the HYG018N10NS1B6 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find HYG018N10NS1B6 pin diagram and circuit diagram and usage method of function,HYG018N10NS1B6 electronics tutorials.You can download from the Twicea.