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HY029N10P Tech Specifications

HUAYI  HY029N10P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Drain Source Voltage (Vdss) 100V
Drain Source On Resistance (RDS(on)@Vgs,Id) 2.6mΩ@10V,50A
Power Dissipation (Pd) 394.7W
Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
Reverse Transfer Capacitance (Crss@Vds) 37pF@50V
Input Capacitance (Ciss@Vds) 10.8nF@50V
Total Gate Charge (Qg@Vgs) 148.7nC@10V
Package Tube-packed
Type 1 N-Channel
Continuous Drain Current (Id) 270A
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HY029N10P Documents

Download datasheets and manufacturer documentation for   HY029N10P

HY029N10P brand manufacturers: HUAYI, Twicea stock, HY029N10P reference price.HUAYI. HY029N10P parameters, HY029N10P Datasheet PDF and pin diagram description download.You can use the HY029N10P Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find HY029N10P pin diagram and circuit diagram and usage method of function,HY029N10P electronics tutorials.You can download from the Twicea.