HSMC Corporation HMBT2907A Single BJT Transistors 0.225 W 60 V 0.6 A 50
HMBT2907A
2301-365-HMBT2907A
RoHS Compliant
Power Dissipation-Max (Abs): 0.225 W,Collector-Emitter Voltage-Max: 60 V,Collector Current-Max (IC): 0.6 A,DC Current Gain-Min (hFE): 50
In Stock Min. : 1
Mult. : 1
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HMBT2907A Tech Specifications
SMC Diode Solutions HMBT2907A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HSMC CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Collector Current-Max (IC) | 0.6 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 60 V |
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