Hitachi Ltd 2SC5827 Single BJT Transistors 5.5 V 0.08 W 0.08 A 100
2SC5827
1094-365-2SC5827
RoHS Compliant
Collector-Emitter Voltage-Max: 5.5 V,Power Dissipation-Max (Abs): 0.08 W,Collector Current-Max (IC): 0.08 A,DC Current Gain-Min (hFE): 100
In Stock Min. : 1
Mult. : 1
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2SC5827 Tech Specifications
HITACHI 2SC5827 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-F3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 4500 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.08 W | |
| Collector Current-Max (IC) | 0.08 A | |
| DC Current Gain-Min (hFE) | 100 | |
| Collector-Emitter Voltage-Max | 5.5 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 1.15 pF |
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