Hitachi Ltd 2SC3390 Single BJT Transistors 50 V 0.3 W 0.1 A 100
2SC3390
1094-365-2SC3390
RoHS Compliant
Collector-Emitter Voltage-Max: 50 V,Power Dissipation-Max (Abs): 0.3 W,Collector Current-Max (IC): 0.1 A,DC Current Gain-Min (hFE): 100
In Stock Min. : 1
Mult. : 1
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2SC3390 Tech Specifications
HITACHI 2SC3390 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Package Description | SPAK-3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 100 | |
| Collector-Emitter Voltage-Max | 50 V |
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