Hitachi Ltd 2SB1001 Single BJT Transistors 100 2 A 1 W
2SB1001
1094-365-2SB1001
RoHS Compliant
DC Current Gain-Min (hFE): 100,Collector Current-Max (IC): 2 A,Power Dissipation-Max (Abs): 1 W
In Stock Min. : 1
Mult. : 1
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2SB1001 Tech Specifications
HITACHI 2SB1001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transition Frequency-Nom (fT) | 80 MHz | |
| Package Style | SMALL OUTLINE | |
| Package Shape | RECTANGULAR | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Number of Elements | 1 Element | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Ihs Manufacturer | HITACHI LTD | |
| Part Life Cycle Code | Transferred | |
| Rohs Code | No | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 1 W | |
| Collector Current-Max (IC) | 2 A | |
| DC Current Gain-Min (hFE) | 100 |
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