Hitachi Ltd 2SA1566JIDTL Single BJT Transistors 120 V 250 0.1 A
2SA1566JIDTL
1094-365-2SA1566JIDTL
RoHS Compliant
Collector-Emitter Voltage-Max: 120 V,DC Current Gain-Min (hFE): 250,Collector Current-Max (IC): 0.1 A
In Stock Min. : 1
Mult. : 1
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2SA1566JIDTL Tech Specifications
HITACHI 2SA1566JIDTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 90 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 250 | |
| Collector-Emitter Voltage-Max | 120 V |
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