Hitachi HAT1025R Single MOSFETs Transistors 36 A
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HAT1025R Tech Specifications
HITACHI HAT1025R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | HAT1025R | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Hitachi Ltd | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Risk Rank | 5.35 | |
| Part Package Code | SOIC | |
| Drain Current-Max (ID) | 4.5 A | |
| ECCN Code | EAR99 | |
| Subcategory | Other Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | MS-012AA | |
| Drain Current-Max (Abs) (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 3 W |
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