Hitachi 2SJ220L Single MOSFETs Transistors 80 A
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2SJ220L Tech Specifications
HITACHI 2SJ220L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | 2SJ220(L) | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Hitachi Ltd | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Risk Rank | 5.32 | |
| Drain Current-Max (ID) | 20 A | |
| ECCN Code | EAR99 | |
| Subcategory | Other Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 75 W |
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