GeneSiC Semiconductor KBJ2008G RF Diodes
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KBJ2008G Tech Specifications
GeneSiC Semiconductor KBJ2008G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Terminals | 4Terminals | |
| Package Description | R-PSFM-T4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | KBJ2008G | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Lite-On Semiconductor Corporation | |
| Number of Elements | 4 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITE-ON SEMICONDUCTOR CORP | |
| Risk Rank | 5.7 | |
| Pbfree Code | Yes | |
| Additional Feature | UL RECOGNIZED | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | 255 | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSFM-T4 | |
| Qualification Status | Not Qualified | |
| Configuration | BRIDGE, 4 ELEMENTS | |
| Diode Type | BRIDGE RECTIFIER DIODE | |
| Output Current-Max | 3 A | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 800 V | |
| Non-rep Pk Forward Current-Max | 200 A | |
| Breakdown Voltage-Min | 800 V |
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