General Transistor Corp 2N3235 Single BJT Transistors 55 V 117 W 15 A 20
2N3235
2014-365-2N3235
RoHS Compliant
Collector-Emitter Voltage-Max: 55 V,Power Dissipation-Max (Abs): 117 W,Collector Current-Max (IC): 15 A,DC Current Gain-Min (hFE): 20
In Stock Min. : 1
Mult. : 1
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2N3235 Tech Specifications
Raltron 2N3235 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | GENERAL TRANSISTOR CORP | |
| Part Package Code | TO-204AA | |
| Package Description | TO-3, 2 PIN | |
| Number of Elements | 1 Element | |
| Transition Frequency-Nom (fT) | 0.02 MHz | |
| Package Style | FLANGE MOUNT | |
| Package Shape | ROUND | |
| Package Body Material | METAL | |
| Operating Temperature-Max | 175 °C | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-3 | |
| Power Dissipation-Max (Abs) | 117 W | |
| Collector Current-Max (IC) | 15 A | |
| DC Current Gain-Min (hFE) | 20 | |
| Collector-Emitter Voltage-Max | 55 V |
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