Galaxy Semi-Conductor Co Ltd 2SA1664 Single BJT Transistors 0.8 A 35 30 V
2SA1664
931-365-2SA1664
RoHS Compliant
Collector Current-Max (IC): 0.8 A,DC Current Gain-Min (hFE): 35,Collector-Emitter Voltage-Max: 30 V
In Stock Min. : 1
Mult. : 1
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2SA1664 Tech Specifications
GALAXY 2SA1664 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 120 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | SINGLE | |
| Polarity/Channel Type | PNP | |
| Collector Current-Max (IC) | 0.8 A | |
| DC Current Gain-Min (hFE) | 35 | |
| Collector-Emitter Voltage-Max | 30 V |
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