FUXINSEMI S9018 Single BJT Transistors
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S9018
FUXINSEMI S9018 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 50nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 15V | |
| Power Dissipation (Pd) | 200mW | |
| Collector Current (Ic) | 50mA | |
| Transition Frequency (fT) | 800MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@10mA,1mA | |
| Package | Tape & Reel (TR) | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Transistor Type | NPN |
S9018
Download datasheets and manufacturer documentation for S9018
- Datasheets66f07a31998efa40ac792962fd425b00.pdf
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