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S9012 Tech Specifications

FUXINSEMI  S9012 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 25V
Power Dissipation (Pd) 300mW
DC Current Gain (hFE@Ic,Vce) 400@50mA,1V
Collector Current (Ic) 500mA
Transition Frequency (fT) 150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@500mA,50mA
Package Tape & Reel (TR)
Operating Temperature -55℃~+150℃
Transistor Type PNP
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S9012 Documents

Download datasheets and manufacturer documentation for   S9012

S9012 brand manufacturers: FUXINSEMI, Twicea stock, S9012 reference price.FUXINSEMI. S9012 parameters, S9012 Datasheet PDF and pin diagram description download.You can use the S9012 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find S9012 pin diagram and circuit diagram and usage method of function,S9012 electronics tutorials.You can download from the Twicea.