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MMBT3906 Tech Specifications

FUXINSEMI  MMBT3906 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 300@10mA,1V
Collector Current (Ic) 200mA
Transition Frequency (fT) 300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@50mA,5mA
Package Tape & Reel (TR)
Operating Temperature -55℃~+150℃
Transistor Type PNP
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MMBT3906 Documents

Download datasheets and manufacturer documentation for   MMBT3906

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