Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply

MMBT3904LT1G Tech Specifications

FUXINSEMI  MMBT3904LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 300@10mA,1V
Collector Current (Ic) 200mA
Transition Frequency (fT) 300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@50mA,5mA
Package Tape & Reel (TR)
Operating Temperature -55℃~+150℃
Transistor Type NPN
View Similar
MMBT3904LT1G brand manufacturers: FUXINSEMI, Twicea stock, MMBT3904LT1G reference price.FUXINSEMI. MMBT3904LT1G parameters, MMBT3904LT1G Datasheet PDF and pin diagram description download.You can use the MMBT3904LT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT3904LT1G pin diagram and circuit diagram and usage method of function,MMBT3904LT1G electronics tutorials.You can download from the Twicea.