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C1815

FUXINSEMI  C1815 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 50V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 400@2mA,6V
Collector Current (Ic) 150mA
Transition Frequency (fT) 80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@100mA,10mA
Package Tape & Reel (TR)
Operating Temperature -55℃~+150℃
Transistor Type NPN

C1815

Download datasheets and manufacturer documentation for   C1815

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