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BT138-800E Tech Specifications

FUXINSEMI  BT138-800E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Holding Current (Ih) 30mA
Gate Trigger Current(Igt) 10mA
Peak Forward On?State Voltage (Vtm) 1.55V
Average Gate Power Dissipation (PG(AV)) 500mW
RMS On-State Current(It (rms)) 12A
Peak Repetitive Off?State Voltage (Vdrm) 800V
Peak non-repetitive surge current (Itsm@f) 95A@50Hz
Gate Trigger Voltage (Vgt) 1.3V
Package Tube-packed
Operating Temperature -40℃~+125℃
SCR Type Two-way thyristor
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BT138-800E Documents

Download datasheets and manufacturer documentation for   BT138-800E

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