BC847B Tech Specifications

FUXINSEMI  BC847B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 800@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@100mA,5mA
Package Tape & Reel (TR)
Operating Temperature -55℃~+150℃
Transistor Type NPN
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BC847B brand manufacturers: FUXINSEMI, Twicea stock, BC847B reference price.FUXINSEMI. BC847B parameters, BC847B Datasheet PDF and pin diagram description download.You can use the BC847B Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC847B pin diagram and circuit diagram and usage method of function,BC847B electronics tutorials.You can download from the Twicea.