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BC847B Tech Specifications
FUXINSEMI BC847B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V | |
| Power Dissipation (Pd) | 200mW | |
| DC Current Gain (hFE@Ic,Vce) | 800@2mA,5V | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@100mA,5mA | |
| Package | Tape & Reel (TR) | |
| Operating Temperature | -55℃~+150℃ | |
| Transistor Type | NPN |
BC847B Documents
Download datasheets and manufacturer documentation for BC847B
- Datasheetsf408a80dbf72f722e30c904594739e0d.pdf
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