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BC807-40 Tech Specifications
FUXINSEMI BC807-40 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 700mV@500mA,50mA | |
| Package | Tape & Reel (TR) | |
| DC Current Gain (hFE@Ic,Vce) | 600@100mA,1V | |
| Power Dissipation (Pd) | 300mW | |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| RoHS | true | |
| Collector Current (Ic) | 500mA | |
| Transition Frequency (fT) | 100MHz | |
| Operating Temperature | -55℃~+150℃ | |
| Transistor Type | PNP |
BC807-40 Documents
Download datasheets and manufacturer documentation for BC807-40
- Datasheets4567d2e21979df3df48acfb6ef2d53ee.pdf
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