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FT6112D Tech Specifications
Fujitsu FT6112D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 12Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU SEMICONDUCTOR AMERICA INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T12 | |
| Drain Current-Max (ID) | 4.5 A | |
| Number of Elements | 4 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T12 | |
| Qualification Status | Not Qualified | |
| Configuration | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| DS Breakdown Voltage-Min | 120 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 90 pF | |
| Power Dissipation Ambient-Max | 40 W |
FT6112D Documents
Download datasheets and manufacturer documentation for FT6112D
- DatasheetsFUJMD013-4-15.pdf
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