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EMB12N03V Tech Specifications
CEL EMB12N03V technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EXCELLIANCE MOS CORP | |
| Package Description | SMALL OUTLINE, S-PDSO-F5 | |
| Drain Current-Max (ID) | 18.5 A | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Gross weight | 71.00 | |
| Transport packaging size/quantity | 32*32*18/50 | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | S-PDSO-F5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.0115 Ω | |
| Pulsed Drain Current-Max (IDM) | 74 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 7.2 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | 
EMB12N03V Documents
Download datasheets and manufacturer documentation for EMB12N03V
- Datasheets8c37645f5a5cbb3e2d36bd971a8f9694.pdf
 
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