Everlight Electronics EL-PT5529B/L2/S3 Phototransistors Bulk
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EL-PT5529B/L2/S3 Tech Specifications
Everlight Electronics EL-PT5529B/L2/S3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 30 V | |
| Collector-Emitter Saturation Voltage | 0.4 V | |
| Fall Time | 15 us | |
| Pd - Power Dissipation | 75 mW | |
| Minimum Operating Temperature | - 25 C | |
| Maximum Operating Temperature | + 85 C | |
| Factory Pack QuantityFactory Pack Quantity | 500 | |
| Packaging | Bulk | |
| Type | Phototransistor | |
| Operating Supply Voltage | 400 mV | |
| Rise Time | 15 us | |
| Wavelength | 860 nm | |
| Dark Current | 100 nA | |
| Product | Phototransistors |
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