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MMDT5451-7-F Tech Specifications

Diodes  MMDT5451-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 150V
Collector-Emitter Saturation Voltage 200mV
Number of Elements 2 Elements
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 160V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT5451
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V / 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 160V 150V
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -200mA
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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