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DMN32D2LV-7 Tech Specifications
Diodes DMN32D2LV-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Weight | 3.005049mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Power Dissipation | 400mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | DMN32D2LV | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-F6 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 100mA, 4V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 39pF @ 3V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (ID) | 400mA | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain Current-Max (Abs) (ID) | 0.4A | |
| Drain to Source Breakdown Voltage | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 600μm | |
| Length | 1.6mm | |
| Width | 1.2mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
DMN32D2LV-7 Documents
Download datasheets and manufacturer documentation for DMN32D2LV-7
- DatasheetsDMN32D2LV DMN32D2LV-7-Diodes-Inc.-datasheet-13710247.pdf DMN32D2LV-7-Diodes-Inc.-datasheet-81722667.pdf
- Environmental InformationDiodes RoHS 3 Cert
- PCN Design/SpecificationBond Wire 11/Nov/2011
- PCN Assembly/OriginMult Dev Alt Wafer Source 26/Apr/2018
- RohsStatementDiodes-Inc.-DMN32D2LV-7.pdf
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