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DMB53D0UV-7 Tech Specifications
Diodes DMB53D0UV-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 12 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SOT-563, SOT-666 | |
Number of Pins | 6Pins | |
Weight | 3.005049mg | |
Number of Elements | 1 Element | |
Voltage Rated | 45V NPN 50V N-Channel | |
Packaging | Tape & Reel (TR) | |
Published | 2011 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
Max Operating Temperature | 150°C | |
Min Operating Temperature | -55°C | |
Applications | General Purpose | |
Additional Feature | HIGH RELIABILITY | |
Current Rating (Amps) | 100mA PNP 160mA N-Channel | |
Max Power Dissipation | 250mW | |
Terminal Position | DUAL | |
Terminal Form | FLAT | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | 160mA | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Pin Count | 6 | |
Polarity | NPN | |
Configuration | SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE | |
Number of Channels | 1Channel | |
Operating Mode | ENHANCEMENT MODE | |
Transistor Application | SWITCHING | |
Drain to Source Voltage (Vdss) | 50V | |
Transistor Type | NPN, N-Channel | |
Continuous Drain Current (ID) | 160mA | |
Gate to Source Voltage (Vgs) | 12V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
DC Current Gain-Min (hFE) | 200 | |
Drain to Source Resistance | 3.1Ohm | |
VCEsat-Max | 0.3 V | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |
DMB53D0UV-7 Documents
Download datasheets and manufacturer documentation for DMB53D0UV-7
- DatasheetsDMB53D0UV
- Environmental InformationDiodes RoHS 3 Cert
- PCN Assembly/OriginWafer Source 21/Apr/2017
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