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MPSH10 Tech Specifications
Central MPSH10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 3 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-92 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Number of Elements | 1 Element | |
| hFEMin | 60 | |
| Operating Temperature | -65°C~150°C TJ | |
| Published | 2012 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Power Dissipation | 350mW | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 650MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Max Collector Current | 25mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V | |
| Transition Frequency | 650MHz | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Collector-Base Capacitance-Max | 0.65pF | |
| RoHS Status | RoHS Compliant | 
MPSH10 Documents
Download datasheets and manufacturer documentation for MPSH10
- ReachStatementCentral-Semiconductor-company-41.pdf
 - DatasheetsMPSH10, MPSH11
 - Environmental InformationRoHS3 Cert
 - PCN Obsolescence/ EOLMult Dev EOL 18/Jan/2019
 
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