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2N3819 Tech Specifications
Central 2N3819 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 6 Weeks | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Surface Mount | NO | |
| Weight | 453.59237mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Bulk | |
| Published | 2001 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8541.21.00.95 | |
| Max Power Dissipation | 360mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 360mW | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 25V | |
| Transistor Type | N-Channel JFET | |
| Continuous Drain Current (ID) | 20mA | |
| Gate to Source Voltage (Vgs) | 25V | |
| Drain Current-Max (Abs) (ID) | 0.02A | |
| FET Technology | JUNCTION | |
| Feedback Cap-Max (Crss) | 4 pF | |
| RoHS Status | Non-RoHS Compliant |
2N3819 Documents
Download datasheets and manufacturer documentation for 2N3819
- ReachStatementCentral-Semiconductor-company-41.pdf
- Datasheets2N3819
- PCN Assembly/OriginWafer Process 27/Sep/2019
- Environmental InformationRoHS3 Cert
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