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PN4355 TIN/LEAD Tech Specifications

Central  PN4355 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO-92-3
RoHS N
Mounting Styles Through Hole
Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max 60 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 150 mV
Maximum DC Collector Current -
Pd - Power Dissipation 625 mW
Gain Bandwidth Product fT 500 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 60 at 100 uA, 10 V
DC Current Gain hFE Max 400 at 10 mA, 19 V
Factory Pack QuantityFactory Pack Quantity 2500
Tradename 0
Series PN4355
Packaging Bulk
Configuration Single
Collector Base Voltage (VCBO) 60 V
Continuous Collector Current 500 mA
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