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CEDM7004TR Tech Specifications

Central  CEDM7004TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case SC-101, SOT-883
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package SOT-883
Number of Terminals 3Terminals
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.78A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Power Dissipation (Max) 100mW (Ta)
Package Description 1 X 0.60 MM, HALOGEN FREE, TLP, 3 PIN
Package Style CHIP CARRIER
Package Body Material UNSPECIFIED
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code No
Manufacturer Part Number CEDM7004TR
Package Shape RECTANGULAR
Manufacturer Central Semiconductor Corp
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Risk Rank 5.66
Drain Current-Max (ID) 1.78 A
Operating Temperature -65°C ~ 150°C (TJ)
Series --
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code No
Part Status Active
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature ESD PROTECTED, LOW THERHOLD, LOGIC LEVEL COMPATIBLE
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.79nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) 8V
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 1.78 A
Drain-source On Resistance-Max 0.46 Ω
DS Breakdown Voltage-Min 30 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.1 W
FET Feature --
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